The miniaturization of integrated circuits (ICs) is fueled by the relentless pursuit of Moore’s Law, which predicts a doubling of transistor density every two years. This miniaturization presents significant challenges to the fabrication of interconnects, the metal lines that connect transistors within an IC. Copper has emerged as the preferred interconnect material due to its high electrical conductivity and resistance to electromigration. However, as feature sizes shrink, conventional copper deposition techniques face limitations in achieving the required performance.
Applied Materials’ Novel Deposition Technology
Applied Materials has developed a novel deposition technology, called Selective Electroplating with In-Situ Plasma Treatment (SEIPT), that overcomes these limitations. SEIPT utilizes a combination of plasma treatment and electroplating to deposit copper with unparalleled precision and uniformity.
Plasma Treatment
Prior to electroplating, the substrate is subjected to plasma treatment. The plasma generates highly reactive species that remove contaminants from the surface and activate it for copper deposition. This treatment enhances the adhesion of the deposited copper and reduces the formation of defects.
Electroplating
Following plasma treatment, a pulsed electroplating process is employed to deposit copper selectively on the exposed areas of the substrate. The pulsed nature of the process allows for precise control of the deposition rate and thickness. In addition, SEIPT utilizes a novel electrolyte formulation that suppresses the formation of voids and grain boundaries, resulting in a highly conductive and reliable copper film.
Benefits of SEIPT
SEIPT offers several key benefits over conventional copper deposition techniques:
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Enhanced Conductivity
The uniform and defect-free nature of the deposited copper film minimizes scattering losses, resulting in significantly improved electrical conductivity.
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Reduced Electromigration
The absence of voids and grain boundaries reduces the susceptibility of the copper film to electromigration, a phenomenon that can lead to interconnect failure.
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Substantial Cost Savings
SEIPT’s high deposition rates and reduced need for rework result in substantial cost savings compared to traditional techniques.
Applications
SEIPT is particularly well-suited for the fabrication of 2nm nodes and beyond, where conventional copper deposition techniques fall short. Its ability to deposit copper with high precision and uniformity enables the creation of interconnects with reduced resistance and improved reliability.
Conclusion
Applied Materials’ novel SEIPT deposition technology represents a significant breakthrough in the fabrication of copper interconnects for advanced ICs. By combining plasma treatment and electroplating, SEIPT achieves unparalleled precision, uniformity, and reliability, unlocking the potential of copper wires for 2nm nodes and beyond.
Kind regards
B. Horn
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